Reduction in Al acceptor density by electron irradiation in Al-doped 4H-SiC

被引：0
|
作者：
Matsuura, H
Aso, K
Kagamihara, S
Iwata, H
Ishida, T
Nishikawa, K
机构：
[1] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan
[2] Sansha Elect Mfg Co Ltd, Higashi Yodogawa, Osaka 5330031, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
electron irradiation; Hall-effect measurement; reduction in acceptors; temperature dependence of hole concentration; free carrier concentration spectroscopy;
D O I：
10.4028/www.scientific.net/MSF.457-460.751
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of electron irradiation on the hole concentration in Al-doped 4H-SiC epilayers is investigated with free carrier concentration spectroscopy (FCCS) using the temperature dependent hole concentration p(T). By 4.6-MeV electron irradiation, p(T) is reduced over the whole temperature range. Using FCCS, the densities and energy levels of acceptors or hole traps are determined. In the unirradiated and irradiated samples, similar to200 meV and similar to370 meV acceptor levels or hole-trap levels are detected. By irradiation, only the density of Al acceptors whose energy level is similar to200 meV is reduced from 6.2x10(15) cm(-3) to 8.2x10(14) cm(-3). This indicates that the main reduction in p(T) by the electron irradiation resulted from the decrease of the Al acceptor density, not from the creation of defects.
引用
收藏
页码：751 / 754
页数：4
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