Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

被引：11

作者：

Ji, Shiyang ^{[1
]}

Eto, Kazuma ^{[1
]}

Yoshida, Sadafumi ^{[1
]}

Kojima, Kazutoshi ^{[1
]}

Ishida, Yuuki ^{[1
]}

Saito, Shingo ^{[1
]}

Tsuchida, Hidekazu ^{[2
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 12期

基金：

日本学术振兴会;

关键词：

IMPURITY CONDUCTION; LOW-RESISTIVITY; ALUMINUM; BORON; 6H; TEMPERATURE; DEPENDENCE; ACTIVATION; TRANSPORT; 4H;

D O I：

10.7567/APEX.8.121302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To outline the hopping conduction range, the electrical characteristics of CVD-grown heavily Al-doped 4H-SiC thick epilayers (2.0 x 10(19)-4.0 x 10(20) cm(-3)) were investigated in a wide temperature regime (20-900 K). It is found that, below 100 K, hopping conduction dominates the carrier transport for all epilayers, and the corresponding hopping conduction activation energy shows a maximum of similar to 30 meV at around 1.1 x 10(20) cm(-3). With increasing doping level, the temperature dependence of resistivity evolves and finally obeys the similar to 1/T-1/4 law in the entire temperature regime, which gives direct evidence of variable-range hopping conduction. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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