Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

被引：7
|
作者：
Prabakaran, K. [1 ]
Ramesh, R. [1 ]
Jayasakthi, M. [1 ]
Surender, S. [1 ]
Pradeep, S. [1 ]
Balaji, M. [3 ]
Asokan, K. [4 ]
Baskar, K. [1 ,2 ]
机构：
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[2] Manonmaniam Sundaranar Univ, Tirunelveli, India
[3] Univ Madras, Natl Ctr Nanosci & Nanotechnol, Guindy Campus, Madras, Tamil Nadu, India
[4] Interuniv Accelerator Ctr, New Delhi, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 394卷
关键词：
InGaN; Quantum well; Electronic excitation; Intermixing effects; Photoluminescence; SWIFT HEAVY-IONS; LIGHT-EMITTING-DIODES; PROTON IRRADIATION; BEAM IRRADIATION; GALLIUM NITRIDE; TRACK FORMATION; X-RAY; GAN; HETEROSTRUCTURES; AMORPHIZATION;
D O I：
10.1016/j.nimb.2016.12.042
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0002) and (10-15) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 x 10(11) and 5 x 10(12) ions/cm(2) compared to the pristine QW structures. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：81 / 88
页数：8
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