Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen

被引：4

作者：

Odnoblyudov, VA ^{[1
]}

Kovsh, AR ^{[1
]}

Zhukov, AE ^{[1
]}

Egorov, AY ^{[1
]}

Maleev, NA ^{[1
]}

Mikhrin, SS ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 06期

关键词：

D O I：

10.1134/1.1490977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of using ammonia as a source of nitrogen for the molecular beam epitaxy (MBE) of AlGaAsN/GaAs layers was studied. It is shown that nitrogen is not incorporated into the GaAs layers in a broad range of the MBE conditions studied. The incorporation of nitrogen is possible in the presence of aluminum in the growing film. The molar fraction of nitrogen in the growing material is equal to that of aluminum, provided that the supply rate of ammonium is sufficiently high. Theoretical estimates are confirmed by the experimental data. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：517 / 520

页数：4

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