Effects of electron-phonon interaction on impurity states in ZnSe/ZnCdSe quantum wells under electric fields

被引：4
|
作者：
Huang, ZH
Liang, SD
Chen, CY
Lin, DL
机构：
[1] GUANGZHOU NORMAL UNIV, DEPT PHYS, GUANGZHOU 510400, PEOPLES R CHINA
[2] SUNY BUFFALO, DEPT PHYS, BUFFALO, NY 14260 USA
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 05期
关键词：
quantum wells; semiconductors; impurities in semiconductors; electron-phonon interactions;
D O I：
10.1016/S0038-1098(97)00288-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Effects of electron-phonon interaction on the ground state of a donor in ZnSe/ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III-V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：281 / 285
页数：5
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