Trap depth and Dy3+ luminescence in BaAl2Si2O8 phosphor

被引：15

作者：

Pawade, V. B. ^{[1
]}

Dhoble, S. J. ^{[2
]}

机构：

[1] VNIET, Dept Appl Phys, Nagpur 440023, Maharashtra, India

[2] RTMNU, Dept Phys, Nagpur 440033, Maharashtra, India

来源：

JOURNAL OF LUMINESCENCE | 2014年 / 145卷

关键词：

Phosphor; PL; TL; Trap depth; COMBUSTION SYNTHESIS; EU3+; PHOTOLUMINESCENCE; SR; LA; GD;

D O I：

10.1016/j.jlumin.2013.08.031

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this article we have reported Dy3+ luminescence in BaAl2Si2O8 phosphors by combustion synthesis at 600 degrees C. Phosphor shows emission bands at 484 nm and 577 nm, keeping excitation constant at 367 nm ranging from 300 to 400 nm. Till date there is no report on BaAl2Si2O8:Dy3+ phosphors. Thermoluminescent characterization was carried out to study trap depth in BaAl2Si2O8:Dy3+ phosphor. Phosphor was further characterized by XRD for the confirmation of phase purity. Therefore observed broad blue and yellow bands in Dy3+ ions show that phosphor may be applicable for white-LEDs. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：626 / 630

页数：5

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