Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

被引：49

作者：

Dong, Hang ^{[1
,2
]}

Xue, Huiwen ^{[1
,2
]}

He, Qiming ^{[1
,2
]}

Qin, Yuan ^{[1
,2
]}

Jian, Guangzhong ^{[1
,2
]}

Long, Shibing ^{[1
,2
,3
]}

Liu, Ming ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrat Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 01期

基金：

中国国家自然科学基金;

关键词：

gallium oxide (Ga2O3); ultra-wide bandgap semiconductor; power device; field effect transistor (FET); BETA-GA2O3; SINGLE-CRYSTALS; THIN-FILM; SENSOR;

D O I：

10.1088/1674-4926/40/1/011802

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (similar to 4.8 eV) and large Baliga's figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.

引用

页数：9

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