Electronic noise in high electron-mobility transistors under photo-excitation conditions

被引：0

作者：

Marinchio, H. ^{[1
]}

Sabatini, G. ^{[1
]}

Varani, L. ^{[1
]}

Palermo, C. ^{[1
]}

Shiktorov, P. ^{[2
]}

Starikov, E. ^{[2
]}

Gruzinskis, V. ^{[2
]}

Ziade, P. ^{[3
]}

Kallassy, Z. ^{[3
]}

机构：

[1] Univ Montpellier 2, Inst Elect Sud, CNRS, UMR 5214, Montpellier, France

[2] Semicond Phys Inst, Vilnius, Lithuania

[3] Univ Lihanaise, Fac Sci, Lab Phys Appl, Beirut, Lebanon

来源：

NOISE AND FLUCTUATIONS | 2009年 / 1129卷

关键词：

High-frequency noise; high-electron mobility transistors; photo-excitation; optical beating; plasma waves;

D O I：

暂无

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

The hydrodynamic approach based on the carrier concentration and velocity conservation equations is used to investigate the influence of photo-excitation of plasma waves at the beating frequency of two lasers on the intrinsic extra noise in InGaAs HEMTs caused by thermally-induced plasma oscillations. It is found that, by increasing the amplitude of the photo-excitation, a significant supression of the intrinsic excess noise is observed at the beating frequency as well as at all the frequencies where plasma waves can be excited.

引用

页码：321 / +

页数：2

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