High-Speed Modulation of Index-Guided Implant-Confined Vertical-Cavity Surface-Emitting Lasers

被引：20
|
作者：
Chen, Chen [1 ]
Leisher, Paul O. [2 ]
Kuchta, Daniel M. [3 ]
Choquette, Kent D. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] nLight Corp, Vancouver, WA 98665 USA
[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期
关键词：
High-speed modulation; semiconductor laser; vertical-cavity surface-emitting laser (VCSEL); VCSELS; PERFORMANCE; BANDWIDTH; NOISE;
D O I：
10.1109/JSTQE.2009.2016115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (> 4 mu m), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.
引用
收藏
页码：673 / 678
页数：6
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