Dielectric Properties of La3+ at A Site and Al3+ and Ga3+ Doped at B Site in BaTiO3

In this investigation, the A- and B-site doped BaTiO3 have been investigated. The extremely small concentration of dopant concentration (La3+) at A site with formula Ba(1-3x)La2xTiO3 and (Al3+, Ga3+) B site with formula BaTi(1-3x) Al4xO3 and BaTi(1-3x)Ga4xO3 have been probed using X-ray diffraction (XRD), impedance spectroscopy dielectric spectroscopy, and differential scanning calorimetry (DSC). The dielectric behavior of doped BaTiO3 has been studied in the temperature range 40 to 200 degrees C. It has been observed that as La3+ concentration varies from 0.004 to 0.012, the transition temperature La3+ doped BaTiO3 decrease. In case of Al3+/La3+/Ga3+. The coductivity of doped BaTiO has been reported in the temperature range 500 to 300 degrees C. The activation energies for Al3+ and Ga3+ doped BaTiO3 (x = 0.006) are 0.32 and 0.43 eV, respectively. The types of defects in BaTiO3 have been analyzed on the basis of conductivity data. (c) 2009 The Japan Society of Applied Physics