Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection

被引：3
|
作者：
Ren, Min [1 ]
Zheng, Xiaoguang [1 ]
Chen, Yaojia [1 ]
Chen, Xiao Jie [2 ]
Johnson, Erik B. [2 ]
Christian, James F. [2 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2015年 / 51卷 / 11期
基金：
美国国家航空航天局;
关键词：
Avalanche photodiodes; photodetectors; single photon avalanche photodiodes; afterpulsing; DEEP-LEVEL DEFECTS; OHMIC CONTACTS; 1550; NM; GAAS; PASSIVATION; NOISE; MULTIPLICATION; BREAKDOWN; GAIN;
D O I：
10.1109/JQE.2015.2491648
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report Al0.8Ga0.2As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at lambda = 405 nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to similar to 10(-6)/gate with a similar to 5 ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K.
引用
收藏
页数：6
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