Monte Carlo simulation of hot electron energy growth in a layered optimization scheme of ZnS thin film

被引:0
|
作者
Xu, Zheng [1 ]
Zhao, Suling [1 ]
He, Qingfang [1 ]
Ji, Guorui [1 ]
Zhang, Fujun [1 ]
Xu, Xurong [1 ]
机构
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
关键词
electroluminescence; electronic density of states; hot carriers; II-VI semiconductors; Monte Carlo methods; optimisation; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ANALYTICAL-MODEL;
D O I
10.1063/1.3093695
中图分类号
O59 [应用物理学];
学科分类号
摘要
We carried out Monte Carlo simulation and clarified the variation in electron energy in layered optimized electroluminescent ZnS with high electric field. We found that the following: (1) 8 eV is necessary for the energy of primary electrons entering the luminescent layer with an electric field of 4 MV/cm in order to enhance the excitation of luminescence. (2) The distributions of both the density of states and the hot electron energy concentrate and shift to the high energy end when the electric field increases; thus most of the hot electrons are effective in the excitation of luminescence. (3) The average energy of hot electrons is found to reach a second plateau in a stepwise manner along the increase in electric field corresponding to the second jump in electroluminescence in a layered optimization scheme.
引用
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页数:3
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