Quantum dot infrared photodetectors

被引：0

作者：

Ye, ZM ^{[1
]}

Campbell, JC ^{[1
]}

Chen, ZH ^{[1
]}

Kim, ET ^{[1
]}

Madhukar, A ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

QUANTUM DOT DEVICES AND COMPUTING | 2002年 / 4656卷

关键词：

quantum dot; infrared photodetector; dark current; photoresponse; detectivity; InAs;

D O I：

10.1117/12.460809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 mum. At 77 K and -0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 10(10) cmHz(1/2)/W. By introducing InGaAs cap layers, a QDIP with bias-controllable two-color characteristic was demonstrated.

引用

页码：16 / 24

页数：9

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