Calculation of drain-to-gate characteristics of single-electron structures

被引：0
|
作者：
Abramov, II [1 ]
Ignatenko, SA [1 ]
Novik, EG [1 ]
机构：
[1] Belarusian State Univ Informat & Radioelect, Minsk 220027, BELARUS
来源：
12TH INTERNATIONAL CONFERENCE - MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/CRMICO.2002.1137317
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The two-dimensional numerical models of one- and two-island single-electron structures are modified to calculate their drain-to-gate characteristics. Comparison with experimental data is given for a transistor.
引用
收藏
页码：466 / 467
页数：2
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