Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia

被引：10

作者：

Sun, G. ^{[1
]}

Meissner, E. ^{[1
]}

Hussy, S. ^{[1
]}

Birkmann, B. ^{[1
]}

Friedrich, J. ^{[1
]}

Mueller, G. ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, Crystal Growth Lab, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 292卷 / 02期

关键词：

growth condition; morphology; chemical synthesis; solution growth; GaN single crystals; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.04.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 degrees C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm. Two main morphologies were observed: platelet-like and prism-like, which depended on experimental conditions. The observed varieties of the morphology in the cross-section of GaN samples are attributed to a non-uniform distribution of nitrogen species in solution. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：201 / 205

页数：5

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