Graphene in Electronics: Current Status and Future Outlook

被引：0
|
作者：
Suemitsu, Maki [1 ,2 ]
机构：
[1] Tohoku Univ, RIEC, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, JST CREST, Chiyoda Ku, Tokyo 1070075, Japan
来源：
IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2011年
关键词：
FILMS; GRAPHITE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Impacts of graphene in electronics are reviewed. With the unique quasi-relativistic electronic structure, graphene presents outstanding electrical and optical properties. Today, graphene layers can be formed by various methods, which include CVD for transparent conductive films and graphene-on-silicon (GOS) method for FET applications. Despite numerous issues to be solved before industrialization, graphene is doubtlessly a driver for the next-generation electronics.
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页码：15 / 18
页数：4
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