Modification of C60 thin films by ion irradiation

被引：4
|
作者：
Narumi, K [1 ]
Naramoto, H [1 ]
机构：
[1] Japan Atom Energy Res Inst, Takasaki Branch, Adv Sci Res Ctr, Takasaki, Gumma 3701292, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2002年 / 158卷
关键词：
C-60; Si; C; ion irradiation; thin films; Raman scattering spectroscopy; AFM; polymerization;
D O I：
10.1016/S0257-8972(02)00278-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Transformation of C-60 thin films on Si(111) substrates by irradiation with 7-MeV C-12(2+) ions is investigated. Raman-spectroscopy analysis reveals that irradiation of C-60 films at low dose causes suppression of photopolymerization. The C-60 films are transformed into a form of amorphous carbon at high dose. Slight C-60 molecules still exist in the film up to the dose of 1.1 x 10(16)/cm(2). AFM analysis shows that as-prepared insulating films become conductive after irradiation up to the dose of 1.1 x 10(16)/cm(2), which results from conductive carbon species due to dissociation of the C-60 molecule. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：364 / 367
页数：4
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