Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

被引：15
|
作者：
Jeong, Chan-Yong [1 ]
Kim, Jong In [2 ]
Lee, Jong-Ho [2 ]
Um, Jae-Gwang [3 ]
Jang, Jin [3 ]
Kwon, Hyuck-In [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[3] Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
Double-gate a-IGZO TFTs; low-frequency noise; bulk accumulation channel; oxygen-vacancy related trap; BEHAVIOR;
D O I：
10.1109/LED.2015.2489223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the low-frequency noise (LFN) properties of double-gate (DG) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The LFN from all of the DG, top-gate (TG), and bottom-gate (BG) operation modes was well explained in the framework of the correlated carrier number-mobility fluctuation. However, the extracted noise parameters of the border trap density (NT), Coulomb scattering coefficient (alpha(S)), and apparent noise parameter (alpha(app)) exhibited the highest values during the TG operation mode and the lowest values during the DG operation mode. The higher noise parameters (NT, alpha(S), and alpha(app)) from the TG operation mode compared with those from the BG operation mode were attributed to the poorer quality of the TG interface than the BG interface in the fabricated back-channel-etch-type DG a-IGZO TFTs. During the DG sweeping operation, the formation of the bulk accumulation channel was observed. The lowest noise parameters (NT, alpha(S), and alpha(app)) from the DG operation mode were considered to be a result of the current conduction through the bulk accumulation channel with a relatively low oxygen vacancy-related trap concentration.
引用
收藏
页码：1332 / 1335
页数：4
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