CMOS compatible RF MEMS switch

被引：1

作者：

Lakamraju, NV ^{[1
]}

Kim, B ^{[1
]}

Phillips, SM ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

MEMS, MOEMS, AND MICROMACHINING | 2004年 / 5455卷

关键词：

RF; MEMS switch; electrostatic; CMOS; high power;

D O I：

10.1117/12.544120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mobile technologies have relied on RF switches for a long time. Though the basic function of the switch has remained the same, the way they have been made has changed in the recent past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RF switch that would in many ways replace the electronic and mechanical switches that have been used for so long. The work that is described here is an attempt to design and fabricate an RF MEMS switch that can handle higher RF power and have CMOS compatible operating voltages.

引用

页码：193 / 201

页数：9

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