Growth of ReS2 thin films by pulsed laser deposition

被引：7

作者：

Vishal, B. ^{[1
]}

Sharona, H. ^{[1
]}

Bhat, U. ^{[1
]}

Paul, A. ^{[1
]}

Sreedhara, M. B. ^{[1
]}

Rajaji, V ^{[1
]}

Sarma, S. C. ^{[2
,3
]}

Narayana, C. ^{[1
]}

Peter, S. C. ^{[2
,3
]}

Datta, R. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Bangalore 560064, Karnataka, India

[3] Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Bangalore 560064, Karnataka, India

来源：

THIN SOLID FILMS | 2019年 / 685卷

关键词：

Rhenium disulphide; Molybdenum disulphide; Thin films; 2D materials; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; ATOMIC LAYER; MOS2; PERFORMANCE; NANOSHEETS; SAPPHIRE;

D O I：

10.1016/j.tsf.2019.06.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 perpendicular to (0001) Al2O3 and (0001)ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 degrees C. Films are polycrystalline grown at temperature above 300 degrees C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 x 10 mm(2)) for practical device application.

引用

页码：81 / 87

页数：7

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