Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

被引：3
|
作者：
Patil, V. S. [1 ]
Agrawal, K. S. [1 ]
Khairnar, A. G. [1 ]
Thibeault, B. J. [2 ]
Mahajan, A. M. [1 ]
机构：
[1] North Maharashtra Univ Jalgaon, Dept Elect, Sch Phys Sci, Jalgaon 425001, Maharashtra, India
[2] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA
来源：
MATERIALS RESEARCH BULLETIN | 2017年 / 87卷
关键词：
Interfaces; Thin films; Plasma deposition; TEM; Electrical properties; GATE-STACKS; FILMS;
D O I：
10.1016/j.materresbull.2016.11.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interfacial and electrical properties of HfO2 (5 nm) and Al2O3 (3 nm)/HfO2 (5 nm) high-k deposited on nitride passivated Ge (100) have been investigated. The XPS spectroscopy and HRTEM were used to study the chemical and interfacial properties of deposited thin films. The stack with only HfO2 shows the suppressed electrical properties such as high value of EOT and density of interface traps. The C-V measurement shows the reduced frequency dispersion with small hysteresis after introduction of 3 nm Al2O3 between HfO2 and Ge/GeON. Further, low EOT and D-it have been obtained for GeON/Al2O3/HfO2 gate stack as compared to that of only HfO2 stack. The obtained values of dielectric constant and leakage current density are of similar to 24.18 and 1.6 x 10(-6) A cm(-2) at 1 V gate bias, respectively for the stack with Al2O3. Overall, the 3 nm Al2O3 capping with GeON improves interfacial and electrical properties of Ge MOS devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：208 / 213
页数：6
相关论文
共 50 条
  • [21] Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition
    Wei, H. H.
    He, G.
    Chen, X. S.
    Cui, J. B.
    Zhang, M.
    Chen, H. S.
    Sun, Z. Q.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 591 : 240 - 246
  • [22] Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition
    J.-F. Damlencourt
    O. Renault
    A. Chabli
    F. Martin
    M.-N. Séméria
    F. Bedu
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 379 - 382
  • [23] Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition
    Damlencourt, JF
    Renault, O
    Chabli, A
    Martin, F
    Séméria, MN
    Bedu, F
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (5-7) : 379 - 382
  • [24] Electrical Characterization of ALD Al2O3 and HfO2 Films on Germanium
    Tantraviwat, D.
    Low, Y. H.
    Baine, P. T.
    Mitchell, S. J. N.
    McNeill, D. W.
    Armstrong, B. M.
    Gamble, H. S.
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 201 - 207
  • [25] GaN MOS-HEMT with HfO2 dielectric and Al2O3 interfacial passivation layer grown by atomic layer deposition
    Yue, Yuanzheng
    Hao, Yue
    Zhang, Jincheng
    Ni, Jinyu
    Mao, Wei
    Feng, Qian
    Liu, Linjie
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) : 838 - 840
  • [26] Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide
    Xu, Qian
    Ding, Yao-Xin
    Zheng, Zhi-Wei
    Ying, Lei-Ying
    Zhang, Bao-Ping
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (12)
  • [27] Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces
    Rumaiz, Abdul K.
    Woicik, J. C.
    Carini, G. A.
    Siddons, D. P.
    Cockayne, E.
    Huey, E.
    Lysaght, P. S.
    Fischer, D. A.
    Genova, V.
    APPLIED PHYSICS LETTERS, 2010, 97 (24)
  • [28] Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
    Wilhelmus J. H. Berghuis
    Jimmy Melskens
    Bart Macco
    Roel J. Theeuwes
    Marcel A. Verheijen
    Wilhelmus M. M. Kessels
    Journal of Materials Research, 2021, 36 : 571 - 581
  • [29] Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
    Berghuis, Wilhelmus J. H.
    Melskens, Jimmy
    Macco, Bart
    Theeuwes, Roel J.
    Verheijen, Marcel A.
    Kessels, Wilhelmus M. M.
    JOURNAL OF MATERIALS RESEARCH, 2021, 36 (03) : 571 - 581
  • [30] Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
    Afanas'ev, V. V.
    Badylevich, M.
    Stesmans, A.
    Brammertz, G.
    Delabie, A.
    Sionke, S.
    O'Mahony, A.
    Povey, I. M.
    Pemble, M. E.
    O'Connor, E.
    Hurley, P. K.
    Newcomb, S. B.
    APPLIED PHYSICS LETTERS, 2008, 93 (21)
12345