Molecular beam epitaxy of highly [100]-oriented β-FeSi2 films on lattice-matched strained-Si(001) surface using Si0.7Ge0.3 layers

被引：12
|
作者：
Saito, T
Suemasu, T
Yamaguchi, K
Mizushima, K
Hasegawa, F
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Mitsubishi Mat Corp, Cent Res Inst, Ohmiya Ku, Saitama, Saitama 3308508, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7B期
关键词：
beta-FeSi2; SiGe; template; MBE; CMP;
D O I：
10.1143/JJAP.43.L957
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown highly [100]-oriented beta-FeSi2 Continuous films on lattice-matched Si(001) surfaces using Si0.7Ge0.3 layers by molecular beam epitaxy (MBE). The beta-FeSi2 films grown on the lattice-matched Si(001) did not aggregate even when it was grown at temperatures above 600degreesC. The omega-scan full width at half maximum of the beta-FeSi2(800) peak was smaller than that of the film grown on Si(001) over the entire growth temperature ranging from 500 to 720degreesC. X-ray diffraction pole figure measurements revealed that a [100]-oriented beta-FeSi2 template layer is necessary to obtain [100]-oriented beta-FeSi2 films by MBE even on the lattice-matched Si(001).
引用
收藏
页码：L957 / L959
页数：3
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