Valence-band offset of the lattice-matched β-FeSi2(100)/Si(001) heterostructure -: art. no. 033311

被引：20
|
作者：
Al-Allak, HM [1 ]
Clark, SJ [1 ]
机构：
[1] Univ Durham, Dept Phys, Sci Labs, Durham DH1 3LE, England
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.63.033311
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ab initio pseudopotential calculations have been carried out to determine the valence-band offset across the interface of FeSi2 grown on a silicon substrate. The structure of the beta -FeSi2[010]parallel to Si < 110 > matching interface is also obtained. The lattice parameters of the beta -FeSi2 epilayer defining the interfacial plane were constrained to those of silicon. The valence-band offset was found to be about 0.39 eV with the Si side of the interface having the higher potential.
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