Temperature dependence of Raman scattering in GaMnN

A detailed investigation of temperature-dependent Raman scattering has been carried out on ion-implanted GaMnN with different Mn doses. The observed frequency downshift and linewidth broadening with increasing temperature can be well described by a model taking into account the contributions of the thermal expansion and decay of optical phonons into two and three phonons of lower energy. The authors have demonstrated clear dependence of the phonon frequency, linewidth, and decay process on the Mn concentration in GaMnN, which is found to be closely related to the crystal structure. (c) 2006 American Institute of Physics.