A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach

被引：0

作者：

Jin, H ^{[1
]}

Xi, XM ^{[1
]}

Chan, MS ^{[1
]}

Lin, CH ^{[1
]}

Niknejad, A ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

来源：

ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this paper using the SPP approach. The essential difference of the present theory compared with the previous lies in that the Poisson equation is solved in the term of the electron concentration rather than the term of the surface potential. This solution formulates electrical field, surface potential in inversion charge term rather than the surface potential. Thus, a non-charge-sheet-based analytical solution of inversion charge is obtained directly replacing solution of transcendent equation groups of the surface potential. The obtained inversion charge relation then serves to develop a non-charge-sheet-based analytical theory for undoped symmetric double-gate MOSFETs from Pao-Sah current formulation. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET's data.

引用

页码：45 / 50

页数：6

共 50 条

[41] Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach
Singh, Ajay Kumar
COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2019, 38 (02) : 815 - 828
[42] A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
Djeffal, F.
Abdi, M. A.
Dibi, Z.
Chahdi, M.
Benhaya, A.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 147 (2-3): : 239 - 244
[43] A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
Chen, Q
Agrawal, B
Meindl, JD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (06) : 1086 - 1090
[44] Analytical threshold voltage model for double-gate MOSFETs with localized charges
Kang, Hongki
Han, Jin-Woo
Choi, Yang-Kyu
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (08) : 927 - 930
[45] Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs
Tsormpatzoglou, Andreas
Dimitriadis, Charalabos A.
Clerc, Raphael
Pananakakis, G.
Ghibaudo, Gerard
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) : 2512 - 2516
[46] An analytical charge-based capacitance model for double-gate tunnel FETs
Gholizadeh, Mahdi
Zare, Malihe
Hosseini, Seyed Ebrahim
SUPERLATTICES AND MICROSTRUCTURES, 2021, 152
[47] Drain current model including velocity saturation for symmetric double-gate MOSFETs
Hariharan, Venkatnarayan
Vasi, Juzer
Rao, V. Ramgopal
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 2173 - 2180
[48] Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
Cheralathan, M.
Sampedro, C.
Gamiz, F.
Iniguez, B.
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 142 - 145
[49] A RIGOROUS ANALYTICAL MODEL FOR SHORT-CHANNEL JUNCTIONLESS DOUBLE-GATE MOSFETS
Jiang, Chunsheng
Liang, Renrong
Wang, Jing
Xu, Jun
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[50] Generic carrier-based core model for undoped four-terminal double-gate MOSFETs valid for symmetric, asymmetric, and independent-gate-operation modes
Liu, Feng
He, Jin
Fu, Yue
Hu, Jinhua
Bian, Wei
Song, Yan
Zhang, Xing
Chan, Mansun
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) : 816 - 826

← 1 2 3 4 5 →