A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs using SPP approach

被引：0
|
作者：
Jin, H [1 ]
Xi, XM [1 ]
Chan, MS [1 ]
Lin, CH [1 ]
Niknejad, A [1 ]
Hu, CM [1 ]
机构：
[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA
来源：
ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this paper using the SPP approach. The essential difference of the present theory compared with the previous lies in that the Poisson equation is solved in the term of the electron concentration rather than the term of the surface potential. This solution formulates electrical field, surface potential in inversion charge term rather than the surface potential. Thus, a non-charge-sheet-based analytical solution of inversion charge is obtained directly replacing solution of transcendent equation groups of the surface potential. The obtained inversion charge relation then serves to develop a non-charge-sheet-based analytical theory for undoped symmetric double-gate MOSFETs from Pao-Sah current formulation. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET's data.
引用
收藏
页码：45 / 50
页数：6
相关论文
共 50 条
  • [1] A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach
    He, J
    Xi, XM
    Lin, CH
    Chan, MS
    Niknejad, A
    Hu, CM
    NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 124 - 127
  • [2] A complete carrier-based non-charge-sheet analytic model for nano-scale undoped symmetric double-gate MOSFETs
    He, Jin
    Xing, Zhang
    Wang, Yangyuan
    2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 247 - 252
  • [3] A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes
    Liu, Feng
    He, Jin
    Zhang, Jian
    Chen, Yu
    Chan, Mansun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (12) : 3494 - 3502
  • [4] A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
    He Jin
    Zhang Jian
    Zhang Lining
    Ma Chenyue
    Chan Mansun
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (02)
  • [5] A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
    何进
    张健
    张立宁
    马晨月
    陈文新
    半导体学报, 2009, 30 (02) : 30 - 33
  • [6] Explicit analytical charge and capacitance models of undoped double-gate MOSFETs
    Moldovan, Oana
    Jimenez, David
    Guitart, Jaurne Roig
    Chaves, Ferney A.
    Iniguez, Benjamin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) : 1718 - 1724
  • [7] An analytical drain current model for symmetric double-gate MOSFETs
    Yu, Fei
    Huang, Gongyi
    Lin, Wei
    Xu, Chuanzhong
    AIP ADVANCES, 2018, 8 (04):
  • [8] A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs
    He, Jin
    Zhang, Lining
    Zhang, Jian
    Fu, Yue
    Zheng, Rui
    Chan, Mansun
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (12) : 1312 - 1316
  • [9] A unified charge model for symmetric double-gate and surrounding-gate MOSFETs
    Lu, Huaxin
    Yu, Bo
    Taur, Yuan
    SOLID-STATE ELECTRONICS, 2008, 52 (01) : 67 - 72
  • [10] A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs
    He, Jin
    Zhang, Lining
    Zhang, Jian
    Zheng, Rui
    Fu, Yue
    Chan, Mansun
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 113 - +
12345