Design of GaN-based Resonant Tunneling Diode THz Source Device

被引：0
|
作者：
Qiu Haibing [1 ,2 ]
Yang Wenxian [1 ,2 ]
Bian Lifeng [1 ,2 ]
Lu Shulong [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
来源：
2019 CROSS STRAIT QUAD-REGIONAL RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSQRWC) | 2019年
基金：
中国国家自然科学基金;
关键词：
THz; Resonant Tunneling Diode (RTD); GaN;
D O I：
10.1109/csqrwc.2019.8799315
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
THz wave is located in the special area of transition from macro-electronics to micro-photonics in the electromagnetic spectrum, which is of great value in the fields of imaging, communication, security, biological medicine and nation defense. At present, the highly integrated solid-state light source has become one of the key problem restricting the application of this technology. We design a solid-state THz oscillation source by using based-RTD (resonant tunneling diode) electronic device for improving the property of THz source devices.
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页数：2
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