Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays

被引：0
|
作者：
Gao, Hongwei [1 ]
Teng, Jinghua [2 ]
Chua, Soo Jin [1 ,2 ]
Xiang, Ning [3 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Singapore Inst Technol, Singapore 138683, Singapore
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 02期
关键词：
Quantum Well; Localize Surface Plasmon Resonance; Dark Mode; Bright Mode; Laser Interference Lithography;
D O I：
10.1007/s00339-013-8067-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Coupling effect of surface plasmon (SP) with InGaAs/GaAs QW emission is demonstrated experimentally. The SP resonance is generated by disordered arrays of Au nanodisks on the InGaAs/GaAs QW surface. More than twofold enhancement in QW PL is observed. Theoretical simulations also indicated that the disordered arrays of Au structures enlarged the cone angle for which light can be radiated out. The larger angle enhances the PL intensity.
引用
收藏
页码：487 / 490
页数：4
相关论文
共 50 条
  • [41] Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
    Fu, L.
    Tan, H.H.
    Jagadish, C.
    Johnston, M.B.
    Gal, M.
    Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 1998, : 355 - 357
  • [42] CONFINEMENT SUBBANDS IN AN INGAAS/GAAS NONSQUARE QUANTUM-WELL
    LI, EH
    MICALLEF, J
    WEISS, BL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (1A-B): : L7 - L10
  • [43] INGAAS/GAAS MULTIPLE-QUANTUM-WELL MODULATORS AND SWITCHES
    STOHR, A
    HUMBACH, O
    ZUMKLEY, S
    WINGEN, G
    DAVID, G
    JAGER, D
    BOLLIG, B
    LARKINS, EC
    RALSTON, JD
    OPTICAL AND QUANTUM ELECTRONICS, 1993, 25 (12) : S865 - S883
  • [44] A piezoelectric photothermal study of InGaAs/GaAs quantum well heterostructures
    Wang, P.
    Nakagawa, T.
    Fukuyama, A.
    Maeda, K.
    Iwasa, Y.
    Ozeki, M.
    Akashi, Y.
    Ikari, T.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 826 - 829
  • [45] DYNAMICS OF CARRIER CAPTURE IN AN INGAAS/GAAS QUANTUM WELL TRAP
    OBERLI, DY
    SHAH, J
    JEWELL, JL
    DAMEN, TC
    CHAND, N
    APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1028 - 1030
  • [46] TEM and photoluminescence investigations of InGaAs/GaAs quantum well layers
    Frigeri, C
    Brinciotti, A
    Ritchie, DM
    Di Paola, A
    SOLID STATE PHENOMENA, 1998, 63-4 : 375 - 381
  • [47] Material gain of InGaAs/GaAs quantum well-dots
    Gordeev, Nikita Yu
    Maximov, Mikhail, V
    Payusov, Alexey S.
    Serin, Artem A.
    Shernyakov, Yuri M.
    Mintairov, Sergey A.
    Kalyuzhnyy, Nikolay A.
    Nadtochiy, Alexey M.
    Zhukov, Alexey E.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (01)
  • [48] A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well
    Kong, MY
    Wang, XL
    Pan, D
    Zeng, YP
    Wang, J
    Ge, WK
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1456 - 1459
  • [49] Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission
    Marynski, A.
    Mrowinski, P.
    Ryczko, K.
    Podemski, P.
    Gawarecki, K.
    Musial, A.
    Misiewicz, J.
    Quandt, D.
    Strittmatter, A.
    Rodt, S.
    Reitzenstein, S.
    Sek, G.
    ACTA PHYSICA POLONICA A, 2017, 132 (02) : 386 - 389
  • [50] Control of spontaneous emission in InGaAs/GaAs quantum structure lattices
    Cheng, K. Y.
    Cheng, Chien-Chia
    Hsieh, K. C.
    APPLIED PHYSICS LETTERS, 2011, 99 (16)
12345