Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

被引：34
|
作者：
Xu, C. X. [1 ]
Liu, H. [1 ]
Pan, X. H. [1 ]
Ye, Z. Z. [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
OPTICAL MATERIALS | 2020年 / 108卷
基金：
中国国家自然科学基金;
关键词：
Physical vapor deposition; Epitaxial growth; Thin films; Structural; SURFACE-MORPHOLOGY;
D O I：
10.1016/j.optmat.2020.110145
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
((2) over bar 01) oriented Si-doped beta-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 x 10(18) cm(-3) and a Hall mobility of 0.07 cm(2) V(1)s(1) have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped beta-Ga2O3 films.
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页数：4
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