Effects of silicon nanostructure evolution on Er3+ luminescence in silicon-rich silicon oxide/Er-doped silica multilayers

被引：20
|
作者：
Chang, Jee Soo
Jhe, Ji-Hong
Yang, Moon-Seung
Shin, Jung H.
Kim, Kyung Joong
Moon, Dae Won
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[2] KRISS, Adv Ind Metrol Grpp, Taejon 305600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2364455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of silicon nanostructure evolution on Er3+ luminescence is investigated by using multilayers of 2.5 nm thin SiOx (x < 2) and 10 nm thin Er-doped silica (SiO2:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er3+ luminescence could be investigated while keeping the microscopic Er3+ environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er3+ luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er3+ interaction, suggesting that there is a limit to excess Si and Er contents that can be used. (c) 2006 American Institute of Physics.
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页数：3
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