The electrical and optical studies of NTD GaAs crystals

被引：0
|
作者：
Strzelecka, S
Hruban, A
Gladysz, M
JurkiewiczWegner, E
Orlowski, W
Surma, B
Piersa, M
Gladki, A
Mirowska, A
机构：
来源：
SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION | 1997年 / 3178卷
关键词：
GaAs; neutron transmutation; annealing; electrical parameters; photoluminescence;
D O I：
10.1117/12.280742
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The electrical properties and photoluminescence spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) have been investigated as function of starting material properties, irradiation dose and thermal to fast neutron fluence ratio. The residual carbon acceptors interact: with radiation induced defects (RD) in neutron irradiated GaAs crystals and form nonradiative recombination centers, which are stable up to 700 degrees C.
引用
收藏
页码：242 / 245
页数：4
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