Tuning Phosphorene Nanoribbon Electronic Structure through Edge Oxidization

被引:29
|
作者
Ding, Bangfu [1 ]
Chen, Wei [2 ]
Tang, Zilong [3 ]
Zhang, Junying [1 ]
机构
[1] Beihang Univ, Minist Educ, Key Lab Micronano Measurement Manipulat & Phys, Beijing 100191, Peoples R China
[2] Univ Texas Arlington, Dept Phys, POB 19059, Arlington, TX 76019 USA
[3] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2016年 / 120卷 / 04期
基金
美国国家科学基金会; 高等学校博士学科点专项科研基金;
关键词
ULTRATHIN BLACK PHOSPHORUS; STRAIN; SEMICONDUCTOR; BEHAVIOR; BANDGAP; PHASE;
D O I
10.1021/acs.jpcc.5b09159
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular orbital theory predicts that interactions between lone-pair electrons give rise to van der Waals forces between layers due to the nonequivalent hybridization in bulk black phosphorus. First-principles calculations show that phosphorene nanoribbons (PNRs) have a high activity and can be bonded easily with oxygen atoms and hydroxyl groups, indicating that the PNRs can be oxidized easily. The cliff PNR configuration can be maintained when it is passivated with hydroxyl groups, indicating that it could be stable in a strong alkaline environment. Upon oxidation of their zigzag, armchair, and cliff edges, phosphorene nanoribbons can be changed from semimetallic to semiconducting, and the band gap can be changed from direct to indirect. OHO- [(OH + O)-] and OH- [(O + H)-] passivated PNRs have intrinsic spin magnetic moments of approximately 2.00 mu(B), which originate from the edge unsaturation electrons and the symmetry reduction. Therefore, oxidized PNRs might have potential applications in photoelectronic and spinelectronic devices.
引用
收藏
页码:2149 / 2158
页数:10
相关论文
共 50 条
  • [41] Electronic structure, strain effects and transport property of armchair graphene nanoribbon with variously possible edge oxidation
    Zhao, T.
    Fan, Z. Q.
    Zhang, Z. H.
    Zhou, R. L.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (47)
  • [42] Controllable tuning of the electronic transport in pre-designed graphene nanoribbon
    Zeng, Hui
    Zhao, Jun
    Wei, Jianwei
    Xu, Dahai
    Leburton, J. -P.
    CURRENT APPLIED PHYSICS, 2012, 12 (06) : 1611 - 1614
  • [43] Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon
    Fan, Zhi-Qiang
    Sun, Wei-Yu
    Jiang, Xiang-Wei
    Luo, Jun-Wei
    Li, Shu-Shen
    ORGANIC ELECTRONICS, 2017, 44 : 20 - 24
  • [44] Tuning electronic properties of bilayer Bernal graphene nanoribbon by magnetic modulation
    Li, T. S.
    Hsieh, C. T.
    Chang, S. C.
    SOLID STATE COMMUNICATIONS, 2014, 200 : 56 - 60
  • [45] Modulation of electronic and mechanical properties of phosphorene through strain
    Elahi, Mohammad
    Khaliji, Kaveh
    Tabatabaei, Seyed Mohammad
    Pourfath, Mahdi
    Asgari, Reza
    PHYSICAL REVIEW B, 2015, 91 (11)
  • [46] Electronic properties of phosphorene and graphene nanoribbons with edge vacancies in magnetic field
    Smotlacha, J.
    Pincak, R.
    PHYSICS LETTERS A, 2018, 382 (12) : 846 - 854
  • [47] Band Edge Energy Tuning through Electronic Character Hybridization in Ternary Metal Vanadates
    Richter, Matthias H.
    Peterson, Elizabeth A.
    Zhou, Lan
    Shinde, Aniketa A.
    Newhouse, Paul F.
    Yan, Qimin
    Fackler, Sean W.
    Yano, Junko
    Cooper, Jason K.
    Persson, Kristin A.
    Neaton, Jeffrey B.
    Gregoire, John M.
    CHEMISTRY OF MATERIALS, 2021, 33 (18) : 7242 - 7253
  • [48] Electronic structure and optic absorption of phosphorene under strain
    Duan, Houjian
    Yang, Mou
    Wang, Ruiqiang
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 81 : 177 - 181
  • [49] Electronic and magnetic properties of zigzag graphene nanoribbon with one edge saturated
    Xu, B.
    Yin, J.
    Xia, Y. D.
    Wan, X. G.
    Jiang, K.
    Liu, Z. G.
    APPLIED PHYSICS LETTERS, 2010, 96 (16)
  • [50] Electronic structure engineering of various structural phases of phosphorene
    Kaur, Sumandeep
    Kumar, Ashok
    Srivastava, Sunita
    Tankeshwar, K.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (27) : 18312 - 18322