Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

被引：3
|
作者：
Yu Xiao-Peng [1 ,2 ]
Fan Guang-Han [1 ,2 ]
Ding Bin-Bin [1 ,2 ]
Xiong Jian-Yong [1 ,2 ]
Xiao Yao [1 ,2 ]
Zhang Tao [1 ,2 ]
Zheng Shu-Wen [1 ,2 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
[2] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 02期
基金：
中国国家自然科学基金;
关键词：
InGaN light-emitting diodes (LEDs); p-InAlGaN hole injection layer (HIL); numerical simulation; EFFICIENCY;
D O I：
10.1088/1674-1056/23/2/028502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The characteristics of a blue light-emitting diode (LED) with a p-InAlGaN hole injection layer (HIL) is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InAlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
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收藏
页数：4
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