Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

被引：3
|
作者：
Yu Xiao-Peng [1 ,2 ]
Fan Guang-Han [1 ,2 ]
Ding Bin-Bin [1 ,2 ]
Xiong Jian-Yong [1 ,2 ]
Xiao Yao [1 ,2 ]
Zhang Tao [1 ,2 ]
Zheng Shu-Wen [1 ,2 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
[2] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 02期
基金：
中国国家自然科学基金;
关键词：
InGaN light-emitting diodes (LEDs); p-InAlGaN hole injection layer (HIL); numerical simulation; EFFICIENCY;
D O I：
10.1088/1674-1056/23/2/028502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The characteristics of a blue light-emitting diode (LED) with a p-InAlGaN hole injection layer (HIL) is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InAlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer
    喻晓鹏
    范广涵
    丁彬彬
    熊建勇
    肖瑶
    张涛
    郑树文
    Chinese Physics B, 2014, (02) : 561 - 564
  • [2] Enhanced performance of GaN-based light-emitting diodes by using a p-InAlGaN/GaN superlattice as electron blocking layer
    Wang, Shuchang
    Zhang, Xiong
    Guo, Hao
    Yang, Hongquan
    Zhu, Min
    Cheng, Liwen
    Zeng, Xianghua
    Cui, Yiping
    JOURNAL OF MODERN OPTICS, 2013, 60 (21) : 2013 - 2018
  • [3] GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer
    Yen, Cheng-Hsiung
    Lai, Wei-Chih
    Yang, Ya-Yu
    Wang, Chun-Kai
    Ko, Tsun-Kai
    Hon, Schang-Jing
    Chang, Shoou-Jinn
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (04) : 294 - 296
  • [4] Failure analysis of GaN-based Light-emitting diode with hole vertical structure
    Fu Min
    Wen Shang-Sheng
    Xia Yun-Yun
    Xiang Chang-Ming
    Ma Bing-Xu
    Fang Fang
    ACTA PHYSICA SINICA, 2017, 66 (04)
  • [5] Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
    Kuo, C. H.
    Chang, L. C.
    Kuo, C. W.
    Chi, G. C.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (04) : 257 - 259
  • [6] Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
    Li, Hongjian
    Kang, Junjie
    Li, Panpan
    Ma, Jun
    Wang, Hui
    Liang, Meng
    Li, Zhicong
    Li, Jing
    Yi, Xiaoyan
    Wang, Guohong
    APPLIED PHYSICS LETTERS, 2013, 102 (01)
  • [7] The design and fabrication of a GaN-based monolithic light-emitting diode arrayThe design and fabrication of a GaN-based monolithic light-emitting diode array
    Zhan Teng
    Zhang Yang
    Li Jing
    Ma Jun
    Liu Zhiqiang
    Yi Xiaoyan
    Wang Guohong
    Li Jinmin
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (09)
  • [8] GaN-Based Light-Emitting-Diode With a p-InGaN Layer
    Chen, P. H.
    Kuo, Cheng-Huang
    Lai, W. C.
    Chen, Yu An
    Chang, L. C.
    Chang, S. J.
    JOURNAL OF DISPLAY TECHNOLOGY, 2014, 10 (03): : 204 - 207
  • [9] On the metallic bonding of GaN-based vertical light-emitting diode
    Khan, M. A.
    Trimby, P. W.
    Liu, H. W.
    Zheng, R. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 63 : 237 - 247
  • [10] Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer
    Xian, Yulun
    Huang, Shanjin
    Zheng, Zhiyuan
    Fan, Bingfeng
    Chen, Zimin
    Wu, Zhisheng
    Wang, Gang
    Zhang, Baijun
    Jiang, Hao
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (04): : 255 - 259
12345