Using wafer-scale epitaxial graphene for producing twisted bilayers with controlled twist angle for electronics applications

被引：0
|
作者：
Dimitrakopoulos, Christos D. [1 ]
机构：
[1] Univ Massachusetts, Amherst, MA 01003 USA
来源：
CARBON NANOTUBES, GRAPHENE, AND EMERGING 2D MATERIALS FOR ELECTRONIC AND PHOTONIC DEVICES VIII | 2015年 / 9552卷
关键词：
TRANSISTORS;
D O I：
10.1117/12.2187770
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：1
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