Electron traps at HfO2/SiOx interfaces

被引：3

作者：

Raeissi, B. ^{[1
]}

Chen, Y. Y. ^{[1
]}

Piscator, J. ^{[1
]}

Lai, Z. H. ^{[1
]}

Engstrom, O. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden

来源：

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2008年

关键词：

D O I：

10.1109/ESSDERC.2008.4681716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron traps in HfO(2) have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the "interlayer" of SiO(x) commonly present in high-k/silicon stacks. On the inner side, between SiO(x) and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO(x)/HfO(2) interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.

引用

页码：130 / 133

页数：4

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