RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes

被引：13

作者：

Lee, Jongwon ^{[1
]}

Yang, Kyounghoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon 305, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 01期

关键词：

MMIC amplifiers; negative resistance circuits; resonant tunneling diodes (RTDs);

D O I：

10.1109/LMWC.2016.2629984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the analysis of RF power characteristics in a microwave amplifier using resonant tunneling diodes (RTDs). The implemented IC shows a return loss of more than 11 dB with a low dc-power consumption of 0.42 mW and a power gain of 8.6 dB at 5.8 GHz. The maximum linear RF output power with a uniform gain of 8.6 dB is measured to be -25.4 dBm at the same frequency. The gain hump phenomenon is observed in an input power range from -32 dBm to -16 dBm, and is shown to arise from a sudden movement of the operating point from the negative differential resistance (NDR) region to the positive differential resistance (PDR) region, based on a large-signal load-line analysis together with a harmonic balance simulation.

引用

页码：61 / 63

页数：3

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