MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

被引：37
|
作者：
Guo, D. W. [1 ,2 ]
Cardoso, F. A. [1 ,2 ]
Ferreira, R. [3 ]
Paz, E. [3 ]
Cardoso, S. [1 ,2 ]
Freitas, P. P. [1 ,2 ,3 ]
机构：
[1] INESC MN, P-1000029 Lisbon, Portugal
[2] IN Inst Nanosci & Nanotechnol, P-1000029 Lisbon, Portugal
[3] Int Iberian Nanotechnol Lab INL, P-4715330 Braga, Portugal
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
基金：
欧盟第七框架计划;
关键词：
LOW-FREQUENCY NOISE;
D O I：
10.1063/1.4863933
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A MgO-based magnetic tunnel junction (MTJ) sensor including 72 MTJs in series with 50 x 50 mu m(2) was successfully microfabricated. Due to a two-step annealing strategy, a linear transfer curve was obtained. The tunneling magnetoresistance (TMR) value is as high as 159% and the sensitivity reaches 2.9%/Oe. The field detectivity exhibits the lowest value at 1 V bias current, attaining 1.76 nT/Hz(0.5) and 170 pT/Hz(0.5) for 10 Hz and 1 kHz, respectively. The results show that the sensor could be applied in non-destructive testing systems which are used for detecting small defects inside conductive materials. (C) 2014 AIP Publishing LLC.
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页数：3
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