GaN FET based CubeSat Electrical Power System

被引:0
|
作者
Singh, Shikhar [1 ]
Shrivastav, Ashish [2 ]
Bhattacharya, Subhashish [2 ]
机构
[1] IBM Corp, Syst & Technol Grp, Austin, TX USA
[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
关键词
CubeSat; EPS; GaN;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper deals with the development of high efficiency, compact and flexible Electrical Power System (EPS) for a Cube Satellite (CubeSat). The EPS is responsible for harnessing power from solar panels, battery charging and multidomain voltage output regulation within the CubeSat. This work builds upon the results and learnings obtained from an EPS which uses Silicon MOSFETs. The hardware and software aspects of the development of such photovoltaic battery based power management systems are examined. The introduction of digital controller provides flexibility and intelligence but also introduces controller design challenges with simultaneous execution of multiple control loops. The EPS behaves like a standalone photo-voltaic battery charging system that harnesses solar energy to charge the battery banks. This entails the development of maximum power point tracking techniques as well as battery charging methods such as constant-current/constant-voltage charging. A dual loop control methodology with output current control is implemented to regulate the output current when charging the battery. This new EPS uses GaN FETs with an aim to increase efficiency and have all the functionalities of its silicon counterpart in smaller dimensions.
引用
收藏
页码:1388 / 1395
页数:8
相关论文
共 50 条
  • [31] AlGaN/GaN-on-Si Power FET with Mo/Au Gate
    Kim, Hyun-Seop
    Jang, Won-Ho
    Han, Sang-Woo
    Kim, Hyungtak
    Cho, Chun-Hyung
    Oh, Jungwoo
    Cha, Ho-Young
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17 (02) : 204 - 209
  • [32] GaN on Diamond PAs for CubeSat Radios
    不详
    MICROWAVE JOURNAL, 2019, 62 (04) : 112 - 112
  • [33] A Study on ZCS Problem Due to Phase Change in Inductive Power Transfer Charging System Applying GaN FET
    Ahn, Chul-yong
    Kim, Hyun-Bin
    Kim, Chul-Min
    Kim, Jong-Soo
    2019 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE AND EXPO, ASIA-PACIFIC (ITEC ASIA-PACIFIC 2019): NEW PARADIGM SHIFT, SUSTAINABLE E-MOBILITY, 2019, : 265 - 269
  • [34] GaN MOSFET developed for electrical power switching
    不详
    MRS BULLETIN, 1999, 24 (04) : 8 - 8
  • [35] Comparison of GaN FET and Si MOSFET Based Vienna Rectifiers
    Zhu, Yutong
    Han, Yehui
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [36] GaN-Based Laser Wireless Power Transfer System
    De Santi, Carlo
    Meneghini, Matteo
    Caria, Alessandro
    Dogmus, Ezgi
    Zegaoui, Malek
    Medjdoub, Farid
    Kalinic, Boris
    Cesca, Tiziana
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    MATERIALS, 2018, 11 (01):
  • [37] Loss Analysis in wireless power transfer system based on GaN
    Wu, Min
    Jiang, Yongbin
    Wang, Laili
    Ning, Gaidi
    2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 55 - 59
  • [38] GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications
    Han, Ke
    Li, Jiawei
    Deng, Zhongliang
    Zhang, Yannan
    Long, Shanglin
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 925 - 929
  • [39] Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems
    Raffo, Antonio
    Avolio, Gustavo
    Vadala, Valeria
    Bosi, Gianni
    Vannini, Giorgio
    Schreurs, Dominique
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018, 28 (11) : 1035 - 1037
  • [40] Industrial GaN FET technology
    Blanck, Herve
    Thorpe, James R.
    Behtash, Reza
    Splettstoesser, Joerg
    Brueckner, Peter
    Heckmann, Sylvain
    Jung, Helmut
    Riepe, Klaus
    Bourgeois, Franck
    Hosch, Michael
    Koehn, Dominik
    Stieglauer, Hermann
    Floriot, Didier
    Lambert, Benoit
    Favede, Laurent
    Ouarch, Zineb
    Camiade, Marc
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2010, 2 (01) : 21 - 32