AC and Pulsed-DC Stress Electromigration Failure Mechanisms in Cu Interconnects

被引：0

作者：

Lin, M. H. ^{[1
]}

Oates, A. S. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, 168,Pk Ave 2, Hsinchu 30077, Taiwan

来源：

PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2013年

关键词：

AC Elecromigration; pulse DC; Copper; low-k; RELIABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.

引用

页数：3

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