AC and Pulsed-DC Stress Electromigration Failure Mechanisms in Cu Interconnects

被引：0
|
作者：
Lin, M. H. [1 ]
Oates, A. S. [1 ]
机构：
[1] Taiwan Semicond Mfg Co Ltd, 168,Pk Ave 2, Hsinchu 30077, Taiwan
来源：
PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2013年
关键词：
AC Elecromigration; pulse DC; Copper; low-k; RELIABILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.
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页数：3
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