The utilization of the quantum properties of the electron spin wave function will allow the development of a new class of devices. The problem is still controversial and unsettled, even qualitatively, especially for concentrated spin systems such as 3d metals and their alloys. The variety of crystal structures of 3d metals makes difficult the direct comparison between the experimental results and the theoretical conclusions. On the account of this difficulty, substitutional alloys with the same crystal structure, especially face-centered cubic alloys, have been investigated extensively. In this work the properties of diluted Ga1-xMnxN (x = 0.0630; 0.0315) alloys are calculated in the zinc-blende phase, within the framework of the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) method and the local density approximation (LDA). The alloys are simulated using 32-atom and 64-atom large unit cells, containing one substitutional Mn atom for a Ga atom. The calculations are spin-polarized and we analyze band structures, density of states and total magnetizations. A half-metallic state is predicted at a(0) similar to 4.45Angstrom. The majority-spin band has a rather sharp peak, characteristic of a narrow band, while the minority-spin has a gap. The total magnetization of the cell is 4.00muB which does not change with the Mn concentration. The valence band is ferromagnetically coupled with the Mn atoms, and the spin splitting is not linearly dependent on the Mn concentration.
机构:
Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Yang, Xuelin
Chen, Zhitao
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Chen, Zhitao
Wu, Jiejun
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Wu, Jiejun
Pan, Yaobo
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Pan, Yaobo
Zhang, Yan
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Zhang, Yan
Yang, Zhijian
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Yang, Zhijian
Yu, Tongjun
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
Yu, Tongjun
Zhang, Guoyi
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Peking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R ChinaPeking Univ, Res Ctr Wide Gap Semicond, Sch Phys, State Key Lab AM&MP, Beijing 100871, Peoples R China
机构:
Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, JapanOsaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan
Ogawa, T
Shirai, M
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Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, JapanOsaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan
Shirai, M
Suzuki, N
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Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, JapanOsaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan
Suzuki, N
Kitagawa, I
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Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, JapanOsaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan