Diluted magnetic Ga1-xMnxN alloys:: A first-principles study

被引:3
|
作者
de Paiva, R
Alves, JLA
Nogueira, RA
Leite, JR
Scolfaro, LMR
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30161970 Belo Horizonte, MG, Brazil
[2] Univ Fed Sao Joao del Rei, DCNAT, BR-36300000 Sao Joao del Rei, MG, Brazil
[3] Univ Sao Paulo, Inst Fis, BR-05389970 Sao Paulo, Brazil
关键词
D O I
10.1590/S0103-97332004000400031
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The utilization of the quantum properties of the electron spin wave function will allow the development of a new class of devices. The problem is still controversial and unsettled, even qualitatively, especially for concentrated spin systems such as 3d metals and their alloys. The variety of crystal structures of 3d metals makes difficult the direct comparison between the experimental results and the theoretical conclusions. On the account of this difficulty, substitutional alloys with the same crystal structure, especially face-centered cubic alloys, have been investigated extensively. In this work the properties of diluted Ga1-xMnxN (x = 0.0630; 0.0315) alloys are calculated in the zinc-blende phase, within the framework of the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) method and the local density approximation (LDA). The alloys are simulated using 32-atom and 64-atom large unit cells, containing one substitutional Mn atom for a Ga atom. The calculations are spin-polarized and we analyze band structures, density of states and total magnetizations. A half-metallic state is predicted at a(0) similar to 4.45Angstrom. The majority-spin band has a rather sharp peak, characteristic of a narrow band, while the minority-spin has a gap. The total magnetization of the cell is 4.00muB which does not change with the Mn concentration. The valence band is ferromagnetically coupled with the Mn atoms, and the spin splitting is not linearly dependent on the Mn concentration.
引用
收藏
页码:647 / 649
页数:3
相关论文
共 50 条
  • [21] Magnetic and magneto-transport properties of Ga1-xMnxN grown by MOCVD
    Yang, Xuelin
    Chen, Zhitao
    Wu, Jiejun
    Pan, Yaobo
    Zhang, Yan
    Yang, Zhijian
    Yu, Tongjun
    Zhang, Guoyi
    JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 144 - 148
  • [22] Manganese-hydrogen complexes in Ga1-xMnxN
    Bihler, C.
    Gerstmann, U.
    Hoeb, M.
    Graf, T.
    Gjukic, M.
    Schmidt, W. G.
    Stutzmann, M.
    Brandt, M. S.
    PHYSICAL REVIEW B, 2009, 80 (20)
  • [23] First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)As
    Ogawa, T
    Shirai, M
    Suzuki, N
    Kitagawa, I
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 196 : 428 - 429
  • [24] First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)As
    Department of Physical Science, Graduate School of Engineering Science, Osaka University, I-3 Machikonevama-cho, Toyonaka 560-8531, Japan
    J Magn Magn Mater, (428-429):
  • [25] First-principles studies for the electronic structures of diluted magnetic semiconductors (Ga, Fe)As
    Wei, SY
    Wang, TX
    Yang, ZX
    Ma, L
    COMMUNICATIONS IN THEORETICAL PHYSICS, 2003, 40 (04) : 499 - 502
  • [26] First principle calculation for structural properties and bowing parameter in Ga1-xMnxN materials
    Dehbaoui, M.
    Benkhettou, N.
    Benrekia, R. A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (02) : 37 - 43
  • [27] Magnetic and optical properties of Ga1-xMnxN grown by metalorganic chemical vapour deposition
    Kane, MH
    Asghar, A
    Vestal, CR
    Strassburg, M
    Senawiratne, J
    Zhang, ZJ
    Dietz, N
    Summers, CJ
    Ferguson, IT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (03) : L5 - L9
  • [28] Nanocrystalline Ga1-xMnxN films grown by reactive sputtering
    Leite, D. M. G.
    da Silva, L. F.
    Pereira, A. L. J.
    da Silva, J. H. Dias
    JOURNAL OF CRYSTAL GROWTH, 2006, 294 (02) : 309 - 314
  • [29] Microstructural analysis of Ga1-xMnxN films grown by PEMBE
    Kim, I.
    Kim, J.
    Han, S. H.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : E1529 - E1531
  • [30] Synthesis of bulk Ga1-xMnxN:: A prospective spintronic material
    Podsiadlo, S
    Szyszko, T
    Gebicki, W
    Gosk, J
    Bacewicz, R
    Dobrzycki, L
    Wozniak, K
    Zajac, M
    Twardowski, A
    CHEMISTRY OF MATERIALS, 2003, 15 (24) : 4533 - 4535