Correlation between interface traps and gate leakage current in ultrathin silicon dioxides

被引：0
|
作者：
Loh, WY [1 ]
Cho, BJ [1 ]
Li, MF [1 ]
Lek, CM [1 ]
Yong, YF [1 ]
Joo, MS [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
来源：
PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2002年
关键词：
D O I：
10.1109/IPFA.2002.1025672
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In ultra-thin (20 Angstrom) gate oxide, it is observed that gate leakage current increases in discrete steps similar to quasi-breakdown in thicker oxide. A direct correlation is observed between this gate leakage and interface traps when stressed under both positive and negative gate polarity. Using different sample area, it is observed that this gate leakage current is highly localized but has a weak area dependency.
引用
收藏
页码：246 / 249
页数：4
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