Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material

被引：17

作者：

Wang, Ningning ^{[1
]}

Zhang, Hanyu ^{[1
]}

Zhou, Linjie ^{[1
]}

Lu, Liangjun ^{[1
]}

Chen, Jianping ^{[1
]}

Rahman, B. M. A. ^{[2
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China

[2] City Univ London, Dept Elect & Elect Engn, London EC1V 0HB, England

来源：

MICROMACHINES | 2019年 / 10卷 / 07期

基金：

中国国家自然科学基金;

关键词：

optical switch; phase change material; integrated silicon photonic circuits; nanophononics; PLASMONIC MEMRISTOR;

D O I：

10.3390/mi10070453

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge2Sb2Te5 (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 mu m including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.

引用

页数：8

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