Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material

被引:17
|
作者
Wang, Ningning [1 ]
Zhang, Hanyu [1 ]
Zhou, Linjie [1 ]
Lu, Liangjun [1 ]
Chen, Jianping [1 ]
Rahman, B. M. A. [2 ]
机构
[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China
[2] City Univ London, Dept Elect & Elect Engn, London EC1V 0HB, England
来源
MICROMACHINES | 2019年 / 10卷 / 07期
基金
中国国家自然科学基金;
关键词
optical switch; phase change material; integrated silicon photonic circuits; nanophononics; PLASMONIC MEMRISTOR;
D O I
10.3390/mi10070453
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge2Sb2Te5 (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 mu m including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.
引用
收藏
页数:8
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