Fabrication of planarised conductively patterned diamond for bio-applications

被引:18
|
作者
Tong, Wei [1 ]
Fox, Kate [1 ]
Ganesan, Kumaravelu [1 ]
Turnley, Ann M. [2 ]
Shimoni, Olga [1 ]
Tran, Phong A. [3 ]
Lohrmann, Alexander [1 ]
McFarlane, Thomas [1 ]
Ahnood, Arman [1 ]
Garrett, David J. [1 ]
Meffin, Hamish [4 ,5 ]
O'Brien-Simpson, Neil M. [6 ]
Reynolds, Eric C. [6 ]
Prawer, Steven [1 ]
机构
[1] Univ Melbourne, Sch Phys, Parkville, Vic 3052, Australia
[2] Univ Melbourne, Dept Anat & Neurosci, Parkville, Vic 3052, Australia
[3] Univ Melbourne, Dept Chem & Biomol Engn, Parkville, Vic 3052, Australia
[4] Natl Informat & Commun Technol Australia, Melbourne, Vic 3010, Australia
[5] Univ Melbourne, Dept Elect & Elect Engn, Melbourne, Vic 3010, Australia
[6] Univ Melbourne, Oral Hlth Cooperat Res Ctr, Melbourne Dent Sch, Melbourne, Vic 3010, Australia
基金
澳大利亚研究理事会;
关键词
Diamond; Planar; Neural; Biocompatible; Antibacterial; THIN-FILMS; CELLS; NANOCRYSTALLINE; PLASMA; GROWTH; SURFACES; COATINGS; BACTERIA;
D O I
10.1016/j.msec.2014.07.016
中图分类号
TB3 [工程材料学]; R318.08 [生物材料学];
学科分类号
0805 ; 080501 ; 080502 ;
摘要
The development of smooth, featureless surfaces for biomedical microelectronics is a challenging feat. Other than the traditional electronic materials like silicon, few microelectronic circuits can be produced with conductive features without compromising the surface topography and/or biocompatibility. Diamond is fast becoming a highly sought after biomaterial for electrical stimulation, however, its inherent surface roughness introduced by the growth process limits its applications in electronic circuitry. In this study, we introduce a fabrication method for developing conductive features in an insulating diamond substrate whilst maintaining a planar topography. Using a combination of microwave plasma enhanced chemical vapour deposition, inductively coupled plasma reactive ion etching, secondary diamond growth and silicon wet-etching, we have produced a patterned substrate in which the surface roughness at the interface between the conducting and insulating diamond is approximately 3 nm. We also show that the patterned smooth topography is capable of neuronal cell adhesion and growth whilst restricting bacterial adhesion. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:135 / 144
页数:10
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