Formation of quantum dot structures by atomic hydrogen assisted selective area molecular beam epitaxy

被引:3
|
作者
Suzuki, Y
Shimoda, M
Okada, Y
Kawabe, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期
关键词
GaAs; molecular beam epitaxy (MBE); atomic hydrogen; selective area growth; quantum dots;
D O I
10.1143/JJAP.36.L1538
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated InGaAs/GaAs quantum dot structures by atomic hydrogen assisted selective area molecular beam epitaxy (H-MBE). First, GaAs pyramidal structures with fourfold symmetric {011} facet sidewalls have been formed in (001) GaAs by using SiO2 as a mask with square openings. The shape and width of pyramidal structures observed by using a scanning electron microscope (SEM) and atomic force microscope (AFM) have been determined to be uniform. Using these pyramids, InGaAs quantum dots have been overgrown on top of the pyramids under different growth conditions. Photoluminescence (PL) spectra have been measured in order to study PL peaks arising from quantum dots. Furthermore, we have fabricated GaAs quantum dot array structures coupled to quantum wire networks by our H-MBE selective area growth technique.
引用
收藏
页码:L1538 / L1540
页数:3
相关论文
共 50 条
  • [41] Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy
    Fukui, T
    Kumakura, K
    Nakakoshi, K
    Motohisa, J
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 799 - 802
  • [42] Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy
    Park, YJ
    Hahn, CK
    Kim, KM
    Jung, SK
    Kim, EK
    Min, SK
    PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 305 - 312
  • [43] Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
    Kim, ES
    Usami, N
    Shiraki, Y
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 257 - 265
  • [44] Atomic hydrogen induced step bunching on high-index GaAs substrates for fabrication of novel quantum wire and quantum dot arrays by molecular beam epitaxy
    Nötzel, R
    Ploog, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4588 - 4592
  • [45] Effects of atomic hydrogen in molecular beam epitaxy of Al(Ga)As
    Jang, KY
    Okada, Y
    Kawabe, M
    JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) : 267 - 270
  • [46] Molecular-beam epitaxy of MnAs in the presence of atomic hydrogen
    Morishita, Y
    Iida, K
    Tsuboi, A
    Taniguchi, H
    Sato, K
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (02) : 228 - 233
  • [48] A MOLECULAR-BEAM EPITAXY APPROACH TO QUANTUM-DOT ARRAYS
    KANEKO, M
    SHIMODA, M
    OKADA, Y
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B): : 4390 - 4391
  • [49] Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
    Henini, M.
    NANOSCALE RESEARCH LETTERS, 2006, 1 (01): : 32 - 45
  • [50] Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on silicon
    Finnie, P
    Homma, Y
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 604 - 609