Room-temperature emission from InAs1-xPx/InP self-assembled quantum dots at wavelengths between 1.2 and 1.35 μm

被引：2
|
作者：
Faradjev, FE [1 ]
机构：
[1] KTH, Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 94卷 / 2-3期
关键词：
photoluminescence; self-assembled quantum dots; room-temperature emission; AFM; MOCVD; InAs/InP;
D O I：
10.1016/S0921-5107(02)00096-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on photoluminescence (PL) from self-assembled InAs1-xPx quantum dots (QDs) grown on (100) InP substrate by the low pressure metalorganic vapour phase epitaxy with As/P exchange reaction. PL measurements at temperatures between 4 and 300 K revealed a high-efficiency radiative recombination in the QDs. The high temperature stability of intensity and wavelength of emitted radiation in the spectral range between 1.2 and 1.35 mum demonstrate the potential of the InAs1-xPx/InP QDs for optoelectronic applications. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：243 / 246
页数：4
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