Trends of structural and electrical properties in atomic layer deposited HfO2 films

被引：31
|
作者：
Scarel, G [1 ]
Spiga, S [1 ]
Wiemer, C [1 ]
Tallarida, G [1 ]
Ferrari, S [1 ]
Fanciulli, M [1 ]
机构：
[1] INFM, Lab MDM, I-20041 Agrate Brianza, Italy
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 109卷 / 1-3期
关键词：
high-kappa oxides; hafnium dioxide; atomic layer deposition;
D O I：
10.1016/j.mseb.2003.10.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Understanding and optimizing electrical and structural properties of high-kappa oxides are key steps in view of their application as SiO2 substitutes in CMOS devices. In this work, we address the effects of growth temperature (T-g,) post-deposition annealing and substrate preparation on the structural, compositional, and electrical properties of thin films (approximate to13 nm thick), deposited on p-type Si(1 0 0)/SiO2 (chemical oxide) by atomic layer deposition (ALD). In particular, we investigate the effects of: (1) different T-g (150, 250 and 350 degreesC); (2) rapid thermal annealing at 950 degreesC in N-2 for 60 s; and (3) substrate in situ heat treatment before growth and longer pulses at the beginning of the deposition. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：11 / 16
页数：6
相关论文
共 50 条
  • [31] Dysprosium Incorporation for Phase Stabilization of Atomic-Layer- Deposited HfO2 Thin Films
    Lee, Yujin
    Kim, Kangsik
    Lee, Zonghoon
    Lee, Hong-Sub
    Lee, Han-Bo-Ram
    Kim, Woo-Hee
    Oh, Il-Kwon
    Kim, Hyungjun
    CHEMISTRY OF MATERIALS, 2023, 35 (06) : 2312 - 2320
  • [32] Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition
    Wolborski, Maciej
    Rooth, Marten
    Bakowski, Mietek
    Hallen, Anders
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [33] Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition
    樊继斌
    刘红侠
    高博
    马飞
    卓青青
    郝跃
    Chinese Physics B, 2012, 21 (08) : 502 - 506
  • [34] Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition
    Mueller, Michael P.
    Pingen, Katrin
    Hardtdegen, Alexander
    Aussen, Stephan
    Kindsmueller, Andreas
    Hoffmann-Eifert, Susanne
    De Souza, Roger A.
    APL MATERIALS, 2020, 8 (08)
  • [35] Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate
    Jin, Hyun Soo
    Seok, Tae Jun
    Cho, Deok-Yong
    Park, Tae Joo
    APPLIED SURFACE SCIENCE, 2019, 491 : 83 - 87
  • [36] Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition
    Wilk, GD
    Muller, DA
    APPLIED PHYSICS LETTERS, 2003, 83 (19) : 3984 - 3986
  • [37] Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
    Long, R. D.
    O'Connor, E.
    Newcomb, S. B.
    Monaghan, S.
    Cherkaoui, K.
    Casey, P.
    Hughes, G.
    Thomas, K. K.
    Chalvet, F.
    Povey, I. M.
    Pemble, M. E.
    Hurley, P. K.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)
  • [38] Electronic Passivation of Crystalline Silicon Surfaces Using Spatial-Atomic-Layer-Deposited HfO2 Films and HfO2/SiNx Stacks
    Schmidt, Jan
    Winter, Michael
    Souren, Floor
    Bolding, Jons
    de Vries, Hindrik
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2025, 19 (02):
  • [39] Impact of ozone concentration on atomic layer deposited HfO2 on GaAs
    Chung, K. J.
    Park, T. J.
    Sivasubramani, P.
    Kim, J.
    Ahn, J.
    MICROELECTRONIC ENGINEERING, 2012, 89 : 80 - 83
  • [40] Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer
    Park, Tae Joo
    Kim, Jeong Hwan
    Jang, Jae Hyuck
    Seo, Minha
    Na, Kwang Duk
    Hwang, Cheol Seong
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2226 - 2229
12345