Low-Power High-Tuning Range CMOS Ring Oscillator VCOs

被引：19
|
作者：
Parvizi, Mahdi [1 ]
Khodabakhsh, Amir [1 ]
Nabavi, A. [1 ]
机构：
[1] Tarbiat Modares Univ, Dept Elect Engn, Tehran, Iran
来源：
ICSE: 2008 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2008年
关键词：
CMOS ring oscillator VCO; composite load; High tuning range; Phase noise; Voltage controlled oscillator (VCO);
D O I：
10.1109/SMELEC.2008.4770273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of two new ring oscillators based on differential and single-ended topologies using a 0.13 mu m 1P8M CMOS technology. The differential oscillator utilizes feed-forward technique and a new composite load with inductive impedance, reducing the delay per stage and widening the tuning range. The output frequency ranges from 0.5 to 9.5 GHz and the circuit consumes only 9mW. The simulation result of phase noise is -85.3dBc/Hz 9 1MHz offset from centre frequency. The single-ended ring oscillator with inductive composite load oscillates from 6.3 to 13.9 GHz and consumes only 5.1 mW with phase noise of -81.5dBc/Hz (C) 1MHz offset from centre frequency.
引用
收藏
页码：40 / 44
页数：5
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